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Band effect: A possible mechanism for large magnetoresistance in nonmagnetic materials

Authors Xiong, G
Wang, SD
Wang, XR
Issue Date 2000
Source PHYSICAL REVIEW B, v. 61, (21), 2000, JUN 1, p. 14335-14337
Summary Motivated by a recently observed unusual magnetoresistance in sliver chalcogenides, we propose a mechanism for large magnetoresistance in nonmagnetic materials. We show that the Zeeman splitting can play a very important role in MR under certain conditions. In general, the electron density of states can be divided into two parts, one for spin-up electrons and the other for spindown. The two parts will shift against each other in an external magnetic field due to the Zeeman effect, leading to a substantial change in the effective carrier density when the original Fermi level is near the edge of the band and the Lande factor g of electrons is large such that the electron density of states at the Fermi level is sensitive to the external magnetic field.
ISSN 0163-1829
Rights Physical Review B - Condensed Matter and Materials Physics © copyright 2000 American Physical Society. The Journal's web site is located at
Language English
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