Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/1940

Interference Issues in Silicon RFIC Design

Authors Zhang, Zhaofeng
Pun, Alan
Lau, Jack HKUST affiliated (currently or previously)
Issue Date 1998
Source IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers , 1998, p. 119-122
Summary Traditional noise immunity methodologies used in PCB designs are less effective when applied to RFICs. We present here analyses of both electromagnetic interferences and spiral inductor induced substrate noise in silicon RFICs that can be an impediment in achieving higher integration. In the analysis, we (1) compare the effectiveness of 4 shielding solutions in a triple layer metal technology, (2) contrast the interference on both heavily doped and lightly doped substrates, (3) study the impact of physical separation and geometrical variations, (4) and measure the inductor induced substrate noise on a 0.8 um triple-layer CMOS process.
Note Proceedings of the 1998 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium; Baltimore, MD, USA; ; 7 June 1998 through 11 June 1998; Code 48861
Subjects
ISBN 0780344391
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Language English
Format Conference paper
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