Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/1940

Interference issues in silicon RFIC design

Authors Zhang, ZF
Pun, A
Lau, J
Issue Date 1998
Source 1998 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM , 1998, p. 119-122
Summary Traditional noise immunity methodologies used in PCB designs are less effective when applied to RFICs. We present here analyses of both electromagnetic interferences and spiral inductor induced substrate noise in silicon RFICs that can be an impediment in achieving higher integration. In the analysis, we (1) compare the effectiveness of 4 shielding solutions in a triple layer metal technology, (2) contrast the interference on both heavily doped and lightly doped substrates, (3) study the impact of physical separation and geometrical variations, (4) and measure the inductor induced substrate noise on a 0.8 um triple-layer CMOS process.
Subjects
ISBN 0-7803-4439-1
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Language English
Format Conference paper
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