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A new lateral trench-gate conductivity modulated power transistor

Authors Cai, J.
Sin, JKO View this author's profile
Mok, PKT View this author's profile
Ng, WT
Lai, PPT
Issue Date 1999
Source IEEE transactions on electron devices , v. 46, (8), 1999, AUG, p. 1788-1793
Summary In this paper, a new conductivity modulated power transistor called the Lateral Trench-Gate Bipolar Transistor (LTGBT) is presented, This structure incorporates a trench-gate in which the locations of the channel and source in conventional LIGBT have been interchanged. This channel and source arrangement results in significant improvement in latch-up current density. Experimental results indicate that the static and dynamic latch-up current densities an: improved by 2.3 and 4.2 times, respectively, compared to those of the LIGBT at a n(+) cathode length of 5 mu m. Dependence of the latch-up current density of the LTGBT on the design of the n(+) and p(+) cathode regions is examined both numerically and experimentally. The maximum controllable current density is found to be increased when the space between the trench-gate and the p+ cathode is reduced. Specifically, as the space is decreased to 2 mu m, no latch-up phenomenon was observed. This nonlatch-up characteristic is obtained at the expense of a slight increase (0.8 V) in threshold voltage.
ISSN 0018-9383
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Language English
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