Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/2193

A new lateral trench-gate conductivity modulated power transistor

Authors Cai, J
Sin, JKO
Mok, PKT
Ng, WT
Lai, PPT
Issue Date 1999
Source IEEE transactions on electron devices , v. 46, (8), 1999, AUG, p. 1788-1793
Summary In this paper, a new conductivity modulated power transistor called the Lateral Trench-Gate Bipolar Transistor (LTGBT) is presented, This structure incorporates a trench-gate in which the locations of the channel and source in conventional LIGBT have been interchanged. This channel and source arrangement results in significant improvement in latch-up current density. Experimental results indicate that the static and dynamic latch-up current densities an: improved by 2.3 and 4.2 times, respectively, compared to those of the LIGBT at a n(+) cathode length of 5 mu m. Dependence of the latch-up current density of the LTGBT on the design of the n(+) and p(+) cathode regions is examined both numerically and experimentally. The maximum controllable current density is found to be increased when the space between the trench-gate and the p+ cathode is reduced. Specifically, as the space is decreased to 2 mu m, no latch-up phenomenon was observed. This nonlatch-up characteristic is obtained at the expense of a slight increase (0.8 V) in threshold voltage.
Subjects
ISSN 0018-9383
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