Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/2194

Characterization of sputtered tin oxide thin-films for gas sensing applications

Authors Tang, Zhenan
Jiang, Guoping
Chan, Philip Ching-Ho
Sin, Johnny K. O.
Lau, Silvanus S. W.
Issue Date 1996-07
Source Proceedings of the 6th International Meeting on Chemical Sensors, Gaithersburg, Maryland, USA, 22-25 June 1996
Summary Various techniques can be used to prepare tin oxide thin-films but radio-frequency reactive sputtering is the easiest way to fabricate silicon- based integrated gas sensors[1]. Properties such as atomic concentrations, chemical states, and depth profile of tin and oxygen in the films can strongly influence their electrical characteristics. This is the reason such films can be used in many different kinds of gas sensors. It is, therefore, necessary to systematically study these thin films under different sputtering conditions. This paper describes the results from such a study.
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Language English
Format Conference paper
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