Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/2196

Nanostructural study of luminescent porous polycrystalline silicon

Authors Poon, Vincent M. C.
Han, P. G.
Sin, Johnny K. O.
Wong, H.
Issue Date 1997
Source Pro. in 1997 MRS Spring meeting, San Francisco, 1997
Summary Luminescent porous poly-Si films with large areas or micron-sized patterns have been obtained by anodization or stain etching of phosphorus-doped poly-Si films deposited by low pressure chemical vapor deposition onto Si, thermal oxide or CVD nitride. The anodized film is composed of spherical Si grains with nano-pores formed around the surface. However, the stainetched film has large rectangular Si grains, and no nano-pores can be observed. The intensity of photoluminescence is enhanced after nitric acid boiling or stain etching, and is found to be closely related to the crystallinity of the porous Si layers.
Subjects
Language English
Format Conference paper
Access
Files in this item:
File Description Size Format
1_14nano.pdf 831.82 kB Adobe PDF