Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/2197

Characterization of light emitting porous polycrystalline silicon films

Authors Poon, M.C.
Han, P.G.
Sin, J.K.O.
Wong, H.
Ko, P.K.
Issue Date 1997
Source Materials Research Society Symposium - Proceedings, v. 452, 1997, p. 415-420
Summary Polycrystalline silicon (poly-Si) thin films (approx.700nm) were deposited by LPCVD, doped with 950°C phosphorous diffusion, and rendered porous by anodization and stain etching. From x-ray photoelectron spectroscopy, poly-Si films have atomic concentration of C(1s):O(1s):Si(2p) = 6%:15%:79%. However, porous poly-Si (PPS) films with weak photoluminescence (PL) have C:O:Si of 20%:38%:42%. For PPS films with strong PL, C:O:Si is 11%:38%:51%. From micro-Raman, scattered spectra for 632nm laser source has peak at 735nm and full wave half maximum (FWHM) of 76nm, and is similar to the PL spectra excited by 400nm uv laser source. High resolution transmission electron microscopy (TEM) study shows that PPS film is of complex structure and composes of numerous Si nano-crystals (1 approx. 10nm) surrounded by amorphous materials.
Subjects
ISSN 0272-9172
ISBN 1-55899-356-8
Language English
Format Conference paper
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