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Photoluminescence from the nitrogen-perturbed above-bandgap states in dilute GaAs1−xNx alloys: A microphotoluminescence study

Authors Tan, P. H.
Luo, X. D.
Xu, Z. Y.
Zhang, Y.
Mascarenhas, A.
Xin, H. P.
Tu, C. W.
Ge, Weikun
Issue Date 2006
Source Physical Review B, v. 73, (20), May 2006, article number 205205
Summary Using microphotoluminescence (μ−PL), in dilute N GaAs1−xNx alloys, we observe a PL band far above the bandgap E0 with its peak energy following the so-called E+ transition, but with contribution from perturbed GaAs host states in a broad spectral range (>100 meV). This finding is in sharp contrast to the general understanding that E+ is associated with a well-defined conduction band level (either L1c or Nx). Beyond this insight regarding the strong perturbation of the GaAs band structure caused by N incorporation, we demonstrate that a small amount of isoelectronic doping in conjunction with μ−PL allows direct observation of above-bandgap transitions that are not usually accessible by PL.
ISSN 1098-0121
Rights © 2006 American Physical Society
Language English
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