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Photoluminescence from the nitrogen-perturbed above-bandgap states in dilute GaAs1−xNx alloys: A microphotoluminescence study

Authors Tan, P.H.
Luo, X.D.
Xu, Z.Y.
Zhang, Y.
Mascarenhas, A.
Xin, H.P.
Tu, C.W.
Ge, Weikun
Issue Date 2006
Source Physical Review B , v. 73, (20), May 2006, article number 205205
Summary Using microphotoluminescence (μ−PL), in dilute N GaAs1−xNx alloys, we observe a PL band far above the bandgap E0 with its peak energy following the so-called E+ transition, but with contribution from perturbed GaAs host states in a broad spectral range (>100 meV). This finding is in sharp contrast to the general understanding that E+ is associated with a well-defined conduction band level (either L1c or Nx). Beyond this insight regarding the strong perturbation of the GaAs band structure caused by N incorporation, we demonstrate that a small amount of isoelectronic doping in conjunction with μ−PL allows direct observation of above-bandgap transitions that are not usually accessible by PL.
ISSN 1098-0121
Rights © 2006 American Physical Society
Language English
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