Photoluminescence from the nitrogen-perturbed above-bandgap states in dilute GaAs1-xNx alloys: A microphotoluminescence study
|Authors||Tan, P. H.
Luo, X. D.
Xu, Z. Y.
Xin, H. P.
Tu, C. W.
Ge, W. K.
|Source||PHYSICAL REVIEW B, v. 73, (20), 2006, MAY, article number 205205|
|Summary||Using microphotoluminescence (mu-PL), in dilute N GaAs1-xNx alloys, we observe a PL band far above the bandgap E-0 with its peak energy following the so-called E+ transition, but with contribution from perturbed GaAs host states in a broad spectral range (> 100 meV). This finding is in sharp contrast to the general understanding that E+ is associated with a well-defined conduction band level (either L-1c or N-x). Beyond this insight regarding the strong perturbation of the GaAs band structure caused by N incorporation, we demonstrate that a small amount of isoelectronic doping in conjunction with mu-PL allows direct observation of above-bandgap transitions that are not usually accessible by PL.|
|Rights||Physical Review B © copyright (2006) American Physical Society. The Journal's web site is located at http://prb.aps.org/|
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