Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/2767

Magnetophotoluminescence of Zn0.88Mn0.12Se grown by metal-organic chemical vapor deposition on GaAs substrates

Authors Lu, SL
Jiang, DS
Dai, JM
Yang, CL
He, HT
Ge, WK
Wang, JN
Chang, K
Zhang, JY
Shen, DZ
Issue Date 2006
Source Journal of applied physics, v. 99, (7), 2006, APR 1, article number 073517
Summary Magnetophotoluminescence properties of Zn0.88Mn0.12Se thin films grown by metal-organic chemical vapor deposition on GaAs substrates are investigated in fields up to 10 T. The linewidth of the excitonic luminescence peaks decreases with the increasing magnetic field (< 1 T), but the peak energy is almost unchanged. There is a crossover of the photoluminescence intensities between interband and bound excitonic transitions as the magnetic field is increased to about 1 T. These behaviors are interpreted by the strong tuning of the local alloy disorder potential by the applied magnetic field. In addition, the magnetic field-induced suppression of the energy transfers from excitons to Mn2+ ions is also observed.
Subjects
ISSN 0021-8979
Rights Journal of Applied Physics © copyright (2006) American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap
Language English
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