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Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots

Authors Xu, Shijie
Li, Guangqi
Wang, Yongjia HKUST affiliated (currently or previously)
Zhao, Yang
Chen, Guanhua
Zhao, Degang
Zhu, Jianjun
Yang, Hui
Yu, Dapeng
Wang, Jiannong View this author's profile
Issue Date 2006
Source Applied physics letters , v. 88, (8), 2006, FEB 20, article number 083123
Summary Quantum dissipation and broadening mechanisms in Si-doped InGaN quantum dots are studied via the photoluminescence technique. It is found that the dissipative thermal bath that embeds the quantum dots plays an important role in the photon emission processes. Observed spontaneous emission spectra are modeled with the multimode Brownian oscillator model achieving an excellent agreement between experiment and theory for a wide temperature range. The dimensionless Huang-Rhys factor characterizing the strength of electron-LO-phonon coupling and damping constant accounting for the LO-phonon-bath interaction strength are found to be similar to 0.2 and 200 cm(-1), respectively, for the InGaN QDs. (c) 2006 American Institute of Physics.
ISSN 0003-6951
Rights Applied Physics Letters © copyright (2006) American Institute of Physics. The Journal's web site is located at
Language English
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