Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/2768

Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots

Authors Xu, SJ
Li, GQ
Wang, YJ
Zhao, Y
Chen, GH
Zhao, DG
Zhu, JJ
Yang, H
Yu, DP
Wang, JN
Issue Date 2006
Source Applied physics letters, v. 88, (8), 2006, FEB 20, article number 083123
Summary Quantum dissipation and broadening mechanisms in Si-doped InGaN quantum dots are studied via the photoluminescence technique. It is found that the dissipative thermal bath that embeds the quantum dots plays an important role in the photon emission processes. Observed spontaneous emission spectra are modeled with the multimode Brownian oscillator model achieving an excellent agreement between experiment and theory for a wide temperature range. The dimensionless Huang-Rhys factor characterizing the strength of electron-LO-phonon coupling and damping constant accounting for the LO-phonon-bath interaction strength are found to be similar to 0.2 and 200 cm(-1), respectively, for the InGaN QDs. (c) 2006 American Institute of Physics.
Subjects
ISSN 0003-6951
Rights Applied Physics Letters © copyright (2006) American Institute of Physics. The Journal's web site is located at http://apl.aip.org/apl
Language English
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