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Resistivity minima and Kondo effect in ferromagnetic GaMnAs films

Authors He, Hongtao HKUST affiliated (currently or previously)
Yang, Chunlei HKUST affiliated (currently or previously)
Ge, Wekun HKUST affiliated (currently or previously)
Wang, Jiannong View this author's profile
Dai, Xuemin
Wang, Yuqi HKUST affiliated (currently or previously)
Issue Date 2005
Source Applied physics letters , v. 87, (16), 2005, OCT 17, article number 162506
Summary The temperature dependence of the resistivity of ferromagnetic GaMnAs, as-grown or low-temperature-annealed samples is measured from 2 to 290 K. A resistivity minimum is observed with a corresponding temperature T-M around 10 K for each sample. Below T-M, the resistivity exhibits logarithmic temperature dependence, as alpha ln(T), and alpha is independent of the external magnetic field up to 9 T. Such behavior is explained in terms of the Kondo effect arising from the presence of Mn interstitials in the GaMnAs samples. In addition, a well-defined T-squared dependence of resistivity is found in the temperature range between T-M and the Curie temperature (T-C), which is attributed to single magnon scattering. (C) 2005 American Institute of Physics.
ISSN 0003-6951
Rights Applied Physics Letters © copyright (2005) American Institute of Physics. The Journal's web site is located at
Language English
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