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Efficient second harmonic generation from large band gap II-VI semiconductor photonic crystal

Authors Yang, H.
Xie, P.
Chan, SK HKUST affiliated (currently or previously)
Zhang, ZQ HKUST affiliated (currently or previously)
Sou, IK View this author's profile
Wong, GKL View this author's profile
Wong, KS View this author's profile
Issue Date 2005
Source Applied physics letters , v. 87, (13), 2005, SEP 26
Summary Dramatic enhancement of second harmonic generation (SHG) near the photonic band edge was observed in a one-dimensional ZnSe/ZnMgS semiconductor photonic crystal (PC) structure. Over two orders of magnitude increase in SHG intensity was observed at the photonic band edge at similar to 1400 nm compared to the nonphase matching region. The maximum SHG conversion efficiency of 0.8\% is observed in only seven micrometers length of crystal. This enhancement came from a combination of large ZnSe second order susceptibility coefficient (chi((2))), high density of optical modes and phase matching of the fundamental and second harmonic waves near the photonic band edge due to modification of the dispersion curve by the PC structure. (C) 2005 American Institute of Physics.
ISSN 0003-6951
Rights Applied Physics Letters © copyright (2005) American Institute of Physics. The Journal's web site is located at
Language English
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