Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/2773

Thermally activated carrier transfer processes in InGaN/GaN multi-quantum-well light-emitting devices

Authors Yang, C.L.
Ding, L.
Wang, J.N.
Fung, K.K.
Ge, W.K.
Liang, H.
Yu, L.S.
Qi, Y.D.
Wang, D.L.
Lu, Z.D.
Lau, K.M.
Issue Date 2005
Source Journal of applied physics, v. 98, (2), 2005, p. 1-5
Summary We have studied the temperature-dependent carrier transfer processes in InGaNGaN multi-quantum-well light-emitting devices using various optical techniques such as photoluminescence, electroluminescence, and photoluminescence excitation spectra. The role of the defects in the GaN barrier neighboring to the InGaN region was demonstrated clearly in capturing carriers only at low temperatures. The physical origin of the defects was most possibly attributed to the stacking faults at the interface according to the high-resolution transmission electron spectroscopy pictures. © 2005 American Institute of Physics.
Subjects
ISSN 0021-8979
Rights Journal of Applied Physics © copyright (2005) American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap
Language English
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