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Resonant Raman scattering with the E+ band in a dilute GaAs1-xNx alloy (x=0.1\%)

Authors Tan, P.H.
Xu, Z.Y.
Luo, X.D.
Ge, W.K. HKUST affiliated (currently or previously)
Zhang, Y.
Mascarenhas, A.
Xin, H.P.
Tu, C.W.
Issue Date 2006
Source Applied physics letters , v. 89, (10), 2006, SEP 4, article number 101912
Summary Resonant Raman scattering has been applied to a dilute GaAs1-xNx alloy with 0.1\% N. The Raman lines of GaAs and GaN related modes, their combinations, and multiple order replicas of GaAs-like longitudinal-optical modes have been observed with a lower N composition than those studied previously. All these Raman features are found to be strongly enhanced with excitations in resonance with a broad photoluminescence band that is associated with the so-called E+ transition. This study provides additional insights into how the GaAs host conduction band states are perturbed and thus the electron-phonon interaction is affected by the N doping. (c) 2006 American Institute of Physics.
ISSN 0003-6951
Rights Applied Physics Letters © copyright (2006) American Institute of Physics. The Journal's web site is located at
Language English
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