Resonant Raman scattering with the E+ band in a dilute GaAs1-xNx alloy (x=0.1\%)
|Authors||Tan, P. H.
Xu, Z. Y.
Luo, X. D.
Ge, W. K.
Xin, H. P.
Tu, C. W.
|Source||Applied physics letters , v. 89, (10), 2006, SEP 4, article number 101912|
|Summary||Resonant Raman scattering has been applied to a dilute GaAs1-xNx alloy with 0.1\% N. The Raman lines of GaAs and GaN related modes, their combinations, and multiple order replicas of GaAs-like longitudinal-optical modes have been observed with a lower N composition than those studied previously. All these Raman features are found to be strongly enhanced with excitations in resonance with a broad photoluminescence band that is associated with the so-called E+ transition. This study provides additional insights into how the GaAs host conduction band states are perturbed and thus the electron-phonon interaction is affected by the N doping. (c) 2006 American Institute of Physics.|
|Rights||Applied Physics Letters © copyright (2006) American Institute of Physics. The Journal's web site is located at http://apl.aip.org/|
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