Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/2938

Resonant Raman scattering with the E+ band in a dilute GaAs1-xNx alloy (x=0.1\%)

Authors Tan, P. H.
Xu, Z. Y.
Luo, X. D.
Ge, W. K.
Zhang, Y.
Mascarenhas, A.
Xin, H. P.
Tu, C. W.
Issue Date 2006
Source Applied physics letters, v. 89, (10), 2006, SEP 4, article number 101912
Summary Resonant Raman scattering has been applied to a dilute GaAs1-xNx alloy with 0.1\% N. The Raman lines of GaAs and GaN related modes, their combinations, and multiple order replicas of GaAs-like longitudinal-optical modes have been observed with a lower N composition than those studied previously. All these Raman features are found to be strongly enhanced with excitations in resonance with a broad photoluminescence band that is associated with the so-called E+ transition. This study provides additional insights into how the GaAs host conduction band states are perturbed and thus the electron-phonon interaction is affected by the N doping. (c) 2006 American Institute of Physics.
Subjects
ISSN 0003-6951
Rights Applied Physics Letters © copyright (2006) American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Language English
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