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Unusual carrier thermalization in a dilute GaAs1−xNx alloy

Authors Tan, P.H.
Xu, Z.Y.
Luo, X.D. HKUST affiliated (currently or previously).
Ge, W.K. HKUST affiliated (currently or previously)
Zhang, Y.
Mascarenhas, A.
Xin, H.P.
Tu, C.W.
Issue Date 2007
Source Applied physics letters , v. 90, (6), 2007, FEB 5, article number 061905
Summary Photoluminescence (PL) properties of the E-0, E-0+Delta(0), and E+ bands in an x=0.62\% GaAs1-xNx alloy were investigated in detail, including their peak position, linewidth, and line shape dependences on the excitation energy, excitation power, and temperature, using micro-PL. The hot electrons within the E+ band are found to exhibit highly unusual thermalization, which results in a large blueshift in its PL peak energy by >2k(B)T, suggesting peculiar density of states and carrier dynamics of the E+ band.
ISSN 0003-6951
Rights Applied Physics Letters © copyright (2007) American Institute of Physics. The Journal's web site is located at
Language English
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