Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/2940

Unusual carrier thermalization in a dilute GaAs1−xNx alloy

Authors Tan, P.H.
Xu, Z.Y.
Luo, X.D.
Ge, W.K.
Zhang, Y.
Mascarenhas, A.
Xin, H.P.
Tu, C.W.
Issue Date 2007
Source Applied physics letters , v. 90, (6), 2007, FEB 5, article number 061905
Summary Photoluminescence (PL) properties of the E-0, E-0+Delta(0), and E+ bands in an x=0.62\% GaAs1-xNx alloy were investigated in detail, including their peak position, linewidth, and line shape dependences on the excitation energy, excitation power, and temperature, using micro-PL. The hot electrons within the E+ band are found to exhibit highly unusual thermalization, which results in a large blueshift in its PL peak energy by >2k(B)T, suggesting peculiar density of states and carrier dynamics of the E+ band.
Subjects
ISSN 0003-6951
Rights Applied Physics Letters © copyright (2007) American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Language English
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