Unusual carrier thermalization in a dilute GaAs1−xNx alloy
|Authors||Tan, P. H.
Xu, Z. Y.
Luo, X. D.
Ge, W. K.
Xin, H. P.
Tu, C. W.
|Source||Applied physics letters, v. 90, (6), 2007, FEB 5, article number 061905|
|Summary||Photoluminescence (PL) properties of the E-0, E-0+Delta(0), and E+ bands in an x=0.62\% GaAs1-xNx alloy were investigated in detail, including their peak position, linewidth, and line shape dependences on the excitation energy, excitation power, and temperature, using micro-PL. The hot electrons within the E+ band are found to exhibit highly unusual thermalization, which results in a large blueshift in its PL peak energy by >2k(B)T, suggesting peculiar density of states and carrier dynamics of the E+ band.|
|Rights||Applied Physics Letters © copyright (2007) American Institute of Physics. The Journal's web site is located at http://apl.aip.org/|
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