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Polycrystalline Silicon Films and Thin-Film Transistors Using Solution-Based Metal-Induced Crystallization

Authors Meng, Zhiguo HKUST affiliated (currently or previously)
Zhao, Shuyun HKUST affiliated (currently or previously)
Wu, Chunya
Zhang, Bo
Wong, Man View this author's profile
Kwok, Hoi-Sing View this author's profile
Issue Date 2006
Source Journal of display technology , v. 2, (3), 2006, SEP, p. 265-273
Summary Polycrystalline silicon (poly-Si) films consisting of dish-like and wadding-like domains were obtained with solution-based metal-induced crystallization (SMIC) of amorphous silicon. The Hall mobility of poly-Si was much higher in dish-like domains than in wadding-like domains. Thin-film transistors (TFTs) have been prepared using those two kinds of poly-Si films as the active layer, followed by the phosphosilicate glass (PSG) nickel gettering. The field effect mobility of dish-like domain poly-Si TFTs and wadding-like poly-Si TFTs were 70 similar to 80 cm(2)/V . s and 40 similar to 50 cm(2)/V . s, respectively. With a multi-gate structure, the leakage current of poly-Si TFTs was reduced by 1 to 2 orders of magnitude. In addition, the gate-induced drain leakage current (GIDL) and uniformity of the drain current distribution were also improved. P-type TFTs fabricated using SMIC exhibited excellent reliability.
ISSN 1551-319X
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Language English
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