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Passivation effects of aluminum on polycrystalline silicon thin-film transistor with metal-replaced junctions

Authors Zhang, Dongli
Wong, Man View this author's profile
Issue Date 2007
Source IEEE electron device letters , v. 28, (2), 2007, FEB, p. 126-128
Summary Aluminum was detected in the channel of a thin-film transistor after its replacement of the polycrystalline silicon source and drain junctions. The resulting transistor exhibits enhanced field-effect mobility, steeper slope of the pseudosubthreshold region, reduced turn-on voltage extrapolated from the linear regime of operation, higher ON-state current, and improved immunity against short-channel effects. These improvements are consistent with a. measured reduction in the density of trap states. The reduction can be attributed to the presence of aluminum in the channel.
ISSN 0741-3106
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Language English
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