Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/3142

Large-grain polysilicon crystallization enhancement using pulsed RTA

Authors Cheng, CF
Leung, TC
Poon, MC
Chan, M
Issue Date 2004
Source IEEE electron device letters , v. 25, (8), 2004, AUG, p. 553-555
Summary Enhanced metal-induced lateral crystallization (MILC) using a pulsed rapid thermal annealing (PRTA) technique to form a large-grain polysilicon layer has been investigated. By applying high temperature for a short period of time, MILC is enhanced while the background solid phase crystallization is suppressed. Experimental results show that the PRTA method is capable of increasing the rate of directional crystallization and improving the crystal quality of the recrystallized polysilicon layer. The overall annealing time and total thermal budget to achieve similar grain size as in constant temperature annealing is also reduced.
Subjects
ISSN 0741-3106
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Language English
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