Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/3236

Stress power dependent self-heating degradation of metal-induced laterally crystallized n-type polycrystalline silicon thin-film transistors

Authors Wang, Huaisheng
Wang, Mingxiang
Yang, Zhenyu
Hao, Han
Wong, Man
Issue Date 2007
Source IEEE transactions on electron devices , v. 54, (12), 2007, DEC, p. 3276-3284
Summary Self-heating degradation of n-type metal-induced laterally crystallized polycrystalline silicon thin-film transistors is systematically investigated under various stress powers. A two-stage degradation behavior with turnaround effect at the initial stage is characterized. The initial degradation stage is related to breaking of weak Si-H bonds. The floating-body effect by released hydrogen ions is responsible for the observed back-shift of the transfer curve during the initial stress. On the other hand, the normal degradation stage occurs by breaking of strong Si-Si bonds and trap generation at grain boundaries (GBs) and the gate oxide/channel interface. Our model is supported by observed different activation energies related to two degradation stages and a direct observation of the continuous increase in GB trap density during the normal degradation. Furthermore, during the normal degradation stage, an anomalous continuous field-effect mobility increase along with its V, dependence shift is first observed. It is clarified that this behavior is not a true channel mobility increase, but a consequence of stress-related trap generation.
Subjects
ISSN 0018-9383
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