Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/3237

An analytical expression for drain saturation voltage of polycrystalline silicon thin-film transistors

Authors Hao, Han
Wang, Mingxiang
Wong, Man
Issue Date 2008
Source IEEE electron device letters, v. 29, (4), 2008, APR, p. 357-359
Summary A physical-based analytical expression for the drain saturation voltage V-Dsat of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) is derived. V-Dsat is found to be dominated by the grain boundary potential barrier modulation effect, which can be readily estimated from the device transfer characteristic. Straightforward prediction Of YD at values at arbitrarily given gate voltages based on the proposed formula is demonstrated for both low temperature and high temperature processed poly-Si TFTs in either n- or p-type. The prediction agrees well with experimentally determined V-Dsat value. Derivation of the expression is based on our previously proposed analytical ON-state drain-current model for poly-Si TFTs, with no empirical factors included.
Subjects
ISSN 0741-3106
Rights © 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
Language English
Format Article
Access View full-text via DOI
View full-text via Web of Science
View full-text via Scopus
Find@HKUST
Files in this item:
File Description Size Format
044578601.pdf 194.44 kB Adobe PDF