Microstructure, magnetic, and spin-dependent transport properties of (Zn,Cr)Te films fabricated by magnetron sputtering
|Authors||Wang, W. G.
Yee, K. J.
Kim, D. H.
Han, K. J.
Wang, X. R.
Xiao, John Q.
|Source||PHYSICAL REVIEW B, v. 77, (15), 2008, APR, article numner 155207|
|Summary||Chromium doped zinc telluride thin films with various doping concentrations are fabricated by magnetron sputtering. These films are ferromagnetic and the Curie temperature increases with Cr concentration. X-ray diffraction, transmission electron microscopy, and magnetic circular dichroism characterizations show that the films are free of Cr1-xTex impurities and the ferromagnetism is intrinsic. The transport study shows that the resistivity and magnetoresistance are governed by variable range hopping at low temperatures. A negative magnetoresistance as large as -57\% is observed at 5 K. The magnetoresistance and its temperature dependence can be well explained by a model involving an increase in the localization length of carriers with a magnetic field in the hopping region. An anomalous Hall effect is also observed and a possible origin of the sign difference between the anomalous Hall resistance and ordinary Hall resistance is discussed.|
|Rights||Physical Review B © copyright (2008) American Physical Society. The Journal's web site is located at http://prb.aps.org/|
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