Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/33769

Active and stable Ti/Si/BDD anodes for electro-oxidation

Authors Tian, Yuan
Chen, Xueming
Shang, Chii View this author's profile
Chen, Guohua View this author's profile
Issue Date 2006
Source Journal of the Electrochemical Society , v. 153, (7), 2006, p. J80-J85
Summary Boron-doped diamond film grown on a titanium substrate (Ti/BDD) has shown certain stability with superior activity. The causes of its eventual failure may be the large thermal residual stress in the diamond film, which leads to the delamination of the film. A dissociation of TiC layer would collapse the diamond film also. Ti/BDD stability is expected to be improved by coating a thin layer of silicon on the titanium before growing the diamond film at a relatively low temperature. Hot filament chemical vapor deposition was used to grow the diamond film. Ti/Si/BDD electrode has an accelerated lifetime of 320 h, over 20\% longer than that of the Ti/BDD. Raman spectroscopy, X-ray diffraction, and scanning electron microscopy examinations demonstrated that the films had well-defined diamond features. Ti/Si/BDD anodes also showed excellent activity in anodic oxidation of typical pollutants like phenol, acetic acid, and maleic acid. A pollutant removal efficiency as high as 90\% can be obtained with the effect of pH being insignificant. The current efficiency of slightly over 50\% was observed when 90\% phenol was degraded in terms of chemical oxygen demand at a current density of 200 A/m(2). (c) 2006 The Electrochemical Society.
Subjects
ISSN 0013-4651
Language English
Format Article
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