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Ultra low voltage CMOS image sensor architecture

Authors Chan, Mansun View this author's profile
Xu, Chen HKUST affiliated (currently or previously)
Ki, Wing-Hung View this author's profile
Issue Date 2006
Source US Patent , 7,005,626 B2, 2006
Summary CMOS-based image sensors have a wide range of potential applications since they may be integrated into a number of electronic products such as personal computers, cellular phones, personal digital assistants and many others. CMOS active pixel sensors exploit the mature CMOS industry and can compete with charge coupled devices for low power, high levels of integration and functionality. The present invention is a method to design ultra-low voltage CMOS image sensors. The method allows the scaling of CMOS technology to beyond the quarter micron technology node, which was believed to be an obstacle to CMOS image sensor scaling. In addition, a new readout methodology to add extra dynamic range in the voltage domain is design to supplement the low voltage CMOS sensor. Thus, the power consumption can be minimized in order to maximize battery life and the signals are made as large as possible so that the signal-to-noise ratio is raised.
Language English
Format Patent
Access View details of TTC.PA.175 via HKUST Technology Transfer Center
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