Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/34136

ZnO nanowire field-effect transistor and oxygen sensing property

Authors Fan, Zhiyong View this author's profile
Wang, Dawei
Chang, Paichun
Tseng, Weiyu
Lu, Jia Grace
Issue Date 2004
Source Applied physics letters , v. 85, (24), 2004, p. 5923-5925
Summary Single-crystal ZnO nanowires are synthesized using a vapor trapping chemical vapor deposition method and configured as field-effect transistors. Electrical transport studies show n -type semiconducting behavior with a carrier concentration of ∼107 cm-1 and an electron mobility of ∼17 cm2V s. The contact Schottky barrier between the Au/Ni electrode and nanowire is determined from the temperature dependence of the conductance. Thermionic emission is found to dominate the transport mechanism. The effect of oxygen adsorption on electron transport through the nanowires is investigated. The sensitivity to oxygen is demonstrated to be higher with smaller radii nanowires. Moreover, the oxygen detection sensitivity can be modulated by the gate voltage. These results indicate that ZnO holds high potential for nanoscale sensing applications. © 2004 American Institute of Physics.
ISSN 0003-6951
Language English
Format Article
Access View full-text via DOI
View full-text via Scopus
View full-text via Web of Science
Find@HKUST