Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/3642

Study of the transport properties of annealed (Ga,Mn)As by x-ray absorption spectroscopy

Authors Ji, C. J.
Cao, X. C.
Han, Q. F.
Qiu, K.
Zhong, F.
Li, X. H.
He, H. T.
Wang, J. N.
Wang, Y. Q.
Issue Date 2007
Source Applied physics letters , v. 90, (23), 2007, JUN 4, article number 232501
Summary A systematic Mn L-edge x-ray absorption is carried out on carefully prepared Ga0.946Mn0.054As ferromagnetic semiconductors with varying As-2/Ga flux ratio. It is found that the L-3 peak of the absorption spectroscopy is enhanced after low temperature (LT) annealing. Furthermore it is shown that a more localized electronic structure nearly like the d(5) high-spin state is obtained. It can be attributed to breaking the Mn-S-Mn-I pairs during the annealing process. Furthermore the authors present a direct evidence for a slightly increase of the Mn substitutional concentration due to LT annealing. (c) 2007 American Institute of Physics.
Subjects
ISSN 0003-6951
Rights Applied Physics Letters © copyright (2007) American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Language English
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