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Study of the transport properties of annealed (Ga,Mn)As by x-ray absorption spectroscopy

Authors Ji, Changjian
Cao, Xiancun
Han, Qifeng
Qiu, Kai
Zhong, Fei
Li, Xinhua
He, Hongtao HKUST affiliated (currently or previously)
Wang, Jiannong View this author's profile
Wang, Yuqi HKUST affiliated (currently or previously)
Issue Date 2007
Source Applied physics letters , v. 90, (23), 2007, JUN 4, article number 232501
Summary A systematic Mn L-edge x-ray absorption is carried out on carefully prepared Ga0.946Mn0.054As ferromagnetic semiconductors with varying As-2/Ga flux ratio. It is found that the L-3 peak of the absorption spectroscopy is enhanced after low temperature (LT) annealing. Furthermore it is shown that a more localized electronic structure nearly like the d(5) high-spin state is obtained. It can be attributed to breaking the Mn-S-Mn-I pairs during the annealing process. Furthermore the authors present a direct evidence for a slightly increase of the Mn substitutional concentration due to LT annealing. (c) 2007 American Institute of Physics.
ISSN 0003-6951
Rights Applied Physics Letters © copyright (2007) American Institute of Physics. The Journal's web site is located at
Language English
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