Study of the transport properties of annealed (Ga,Mn)As by x-ray absorption spectroscopy
|Authors||Ji, C. J.
Cao, X. C.
Han, Q. F.
Li, X. H.
He, H. T.
Wang, J. N.
Wang, Y. Q.
|Source||Applied physics letters, v. 90, (23), 2007, JUN 4, article number 232501|
|Summary||A systematic Mn L-edge x-ray absorption is carried out on carefully prepared Ga0.946Mn0.054As ferromagnetic semiconductors with varying As-2/Ga flux ratio. It is found that the L-3 peak of the absorption spectroscopy is enhanced after low temperature (LT) annealing. Furthermore it is shown that a more localized electronic structure nearly like the d(5) high-spin state is obtained. It can be attributed to breaking the Mn-S-Mn-I pairs during the annealing process. Furthermore the authors present a direct evidence for a slightly increase of the Mn substitutional concentration due to LT annealing. (c) 2007 American Institute of Physics.|
|Rights||Applied Physics Letters © copyright (2007) American Institute of Physics. The Journal's web site is located at http://apl.aip.org/|
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