Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/3642

Study of the transport properties of annealed (Ga,Mn)As by x-ray absorption spectroscopy

Authors Ji, C.J.
Cao, X.C.
Han, Q.F.
Qiu, K.
Zhong, F.
Li, X.H.
He, H.T.
Wang, J.N.
Wang, Y.Q.
Issue Date 2007
Source Applied physics letters , v. 90, (23), 2007, JUN 4, article number 232501
Summary A systematic Mn L-edge x-ray absorption is carried out on carefully prepared Ga0.946Mn0.054As ferromagnetic semiconductors with varying As-2/Ga flux ratio. It is found that the L-3 peak of the absorption spectroscopy is enhanced after low temperature (LT) annealing. Furthermore it is shown that a more localized electronic structure nearly like the d(5) high-spin state is obtained. It can be attributed to breaking the Mn-S-Mn-I pairs during the annealing process. Furthermore the authors present a direct evidence for a slightly increase of the Mn substitutional concentration due to LT annealing. (c) 2007 American Institute of Physics.
Subjects
ISSN 0003-6951
Rights Applied Physics Letters © copyright (2007) American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Language English
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