Method for the deposition of diamond on a substrate
Latsch, Stefan A.
|Source||US Patent , 5,368,681. Washington, DC: US Patent and Trademark Office, 1994.|
|Summary||A method is disclosed for the deposition of crystalline diamond on a substrate such as a silicon wafer. A polymer (for example poly(methylmethacrylate)) is provided as a target for laser ablation using for example an ArF excimer laser or an Nd-Yag laser. The laser ablation is performed in the presence of a reactive gas such as oxygen or hydrogen. The substrate is heated to a temperature of between 450 and 700 degrees celsius.|
|Rights||This patent is also available at HKUST Technology Transfer Center Patent Search at <http://patentsearch.ttc.ust.hk/ListPatentsDetail.asp?id=63>|
Files in this item: