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Method for the deposition of diamond on a substrate

Authors Hiraoka, Hiroyuki HKUST affiliated (currently or previously)
Latsch, Stefan A.
Xiao, Rong-Fu
Issue Date 1994-11-29
Source US Patent , 5,368,681. Washington, DC: US Patent and Trademark Office, 1994.
Summary A method is disclosed for the deposition of crystalline diamond on a substrate such as a silicon wafer. A polymer (for example poly(methylmethacrylate)) is provided as a target for laser ablation using for example an ArF excimer laser or an Nd-Yag laser. The laser ablation is performed in the presence of a reactive gas such as oxygen or hydrogen. The substrate is heated to a temperature of between 450 and 700 degrees celsius.
Language English
Format Patent
Access View details of TTC.PA.001 via HKUST Technology Transfer Center
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