Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/390

Method for the deposition of diamond on a substrate

Authors Hiraoka, Hiroyuki
Latsch, Stefan A.
Xiao, Rong-Fu
Issue Date 1994-11-29
Source US Patent , 5,368,681. Washington, DC: US Patent and Trademark Office, 1994.
Summary A method is disclosed for the deposition of crystalline diamond on a substrate such as a silicon wafer. A polymer (for example poly(methylmethacrylate)) is provided as a target for laser ablation using for example an ArF excimer laser or an Nd-Yag laser. The laser ablation is performed in the presence of a reactive gas such as oxygen or hydrogen. The substrate is heated to a temperature of between 450 and 700 degrees celsius.
Subjects
Rights This patent is also available at HKUST Technology Transfer Center Patent Search at <http://patentsearch.ttc.ust.hk/ListPatentsDetail.asp?id=63>
Language English
Format Patent
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