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Thin film transistor

Authors Sin, Johnny K. O.
Kottarath Parambil, Anish Kumar
Issue Date 1999-02-09
Source US Patent, 5,869,847. Washington, DC: US Patent and Trademark Office, 1999.
Summary A thin film transistor (TFT) comprises a n+ source region and a p+ drain separated by an undoped offset region, or the complementary structure with a p+ source and a n+ drain. By means of this arrangement in the offset region is conduction is by way of both electron and hole carriers and the offset region is conductivity modulated. The TFT of the present invention has lower on-resistance than a conventional thin film transistor.
Language English
Format Patent
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