Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/46588

Noise characteristics of GaAs-AlGaAs heterojunction punch-through phototransistors

Authors Luo, Hailin HKUST affiliated (currently or previously).
Chan, HK HKUST affiliated (currently or previously).
Wang, Yu-Qi HKUST affiliated (currently or previously).
Wang, Yuqi HKUST affiliated (currently or previously)
Issue Date 2001
Source IEEE photonics technology letters , v. 13, (7), 2001, JUL, p. 708-710
Summary Novel GaAs-AlGaAs heterojunction phototransistors with a delta -doped base have been fabricated. Very high gain and low output noise have been measured, The measured noise is composed of shot noise associated with collector quiescent bias current and amplified shot noise due to collector leak current for nonpassivated devices. The high gain and low intrinsic noise characteristics of these transistors make them very promising in weak light detection.
Subjects
ISSN 1041-1135
Language English
Format Article
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