Please use this identifier to cite or link to this item:

Laser ablation synthesis and optical characterization of silicon carbide nanowires

Authors Shi, W.
Zheng, Y.
Peng, H.
Wang, N. View this author's profile
Lee, C.S.
Lee, S.T.
Issue Date 2000
Source Journal of the American Ceramic Society , v. 83, (12), 2000, p. 3228-3230
Summary Silicon carbide (SiC) nanowires were synthesized at 900°C by the laser ablation technique. The growth morphology, microstructure, and defects in SiC nanowires were characterized by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The Raman scattering study indicated that the Raman peaks corresponding to the TO and LO phonon modes of the SiC nanowires had larger red shifts compared to those of bulk SiC material. The red shift, broadening peak, and the asymmetry of the Raman peak could be explained by the size confinement effect in the radial and growth directions. The growth mechanism of SiC nanowires was discussed based on the vapor-liquid-solid reaction.
ISSN 0002-7820
Language English
Format Article
Access View full-text via Scopus
View full-text via Web of Science