Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/50919

Silicon nanowires prepared by laser ablation at high temperature

Authors Zhang, YF
Tang, YH
Wang, N. View this author's profile
Yu, DP
Lee, CS
Bello, I.
Lee, ST
Issue Date 1998
Source Applied physics letters , v. 72, (15), April 1998, p. 1835-1837
Summary Silicon nanowires have been synthesized in high yield and high purity by using a high-temperature laser-ablation method with growth rates ranging from 10 to 80 mu m/h. Transmission electron microscopic investigation shows that the nanowires are crystalline Si, and have diameters ranging from 3 to 43 nm and length up to a few hundreds microns. Twins and stacking faults have been observed in the Si core of the nanowires. The lattice structure and constant of the nanowires as determined from x-ray diffraction (XRD) are marry identical to those of bulk Si, although the relative XRD peak intensities are different from those of randomly oriented Si crystallites. Raman scattering from the nanowires shows an asymmetric peak at the same position as that of bulk crystalline silicon. (C) 1998 American Institute of Physics.
ISSN 0003-6951
Language English
Format Article
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