Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/50929

Si nanowires synthesized from silicon monoxide by laser ablation

Authors Tang, YH
Zhang, YF
Wang, N. View this author's profile
Shi, WS
Lee, CS
Bello, I.
Lee, ST
Issue Date 2001
Source Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena , v. 19, (1), January 2001, p. 317-319
Summary By ablating a silicon monoxide target with a pulsed KrF excimer laser at 1200 degreesC in an Ar atmosphere, we have achieved production of high-purity Si nanowires in bulk quantities. The yield and linear growth rate can reach 30 mg/h and 500 mum/h, respectively. Transmission electron micrographs show that the sample of silicon nanowires consists of few nanoparticles. (C) 2001 American Vacuum Society.
ISSN 1071-1023
Language English
Format Article
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