Electromigration studies of Cu/carbon nanotube composite interconnects using Blech structure
Chan, Philip C. H.
Chuang, Y. C.
Liu, C. Y.
|Source||IEEE electron device letters, v. 29, (9), 2008, SEP, p. 1001-1003|
|Summary||The electromigration (EM) properties of pure Cu and Cu/carbon nanotube (CNT) composites were studied using the Blech test structure. Pure Cu and Cu/CNT composite segments were subjected to a current density of 1.2 x 10(6) A/cm(2). The average void growth rate of Cu/CNT composite sample was measured to be around four times lower than that of the pure copper sample. The average critical current-density-length threshold products of the pure Cu and Cu/CNT composites were estimated to be 1800 and 5400 A/cm, respectively. The slower EM rate of the Cu/CNT composite stripes is attributed to the presence of CNT, which acts as trapping centers and causes a decrease in the diffusion of EM-induced migrating atoms.|
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