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Electromigration studies of Cu/carbon nanotube composite interconnects using Blech structure

Authors Chai, Yang HKUST affiliated (currently or previously)
Chan, Philip C.H. HKUST affiliated (currently or previously)
Fu, Yunyi
Chuang, Y.C.
Liu, C.Y.
Issue Date 2008
Source IEEE electron device letters , v. 29, (9), 2008, SEP, p. 1001-1003
Summary The electromigration (EM) properties of pure Cu and Cu/carbon nanotube (CNT) composites were studied using the Blech test structure. Pure Cu and Cu/CNT composite segments were subjected to a current density of 1.2 x 10(6) A/cm(2). The average void growth rate of Cu/CNT composite sample was measured to be around four times lower than that of the pure copper sample. The average critical current-density-length threshold products of the pure Cu and Cu/CNT composites were estimated to be 1800 and 5400 A/cm, respectively. The slower EM rate of the Cu/CNT composite stripes is attributed to the presence of CNT, which acts as trapping centers and causes a decrease in the diffusion of EM-induced migrating atoms.
ISSN 0741-3106
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Language English
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