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Complementary metal-oxide-semiconductor transistor structure for high density and high performance integrated circuits

Authors Chan, Philip Ching-Ho HKUST affiliated (currently or previously)
Chan, Mansun View this author's profile
Wu, Xu Sheng HKUST affiliated (currently or previously)
Zhang, Shengdong HKUST affiliated (currently or previously)
Issue Date 2009-06-09
Source US Patent , 7,545,008 B2, 2009
Summary A semiconductor device may include a substrate and an insulating layer formed on the substrate. A multi-layer fin may be formed on the insulating layer and may include two semiconducting layers isolated by an insulating layer in vertical direction. A first MOS type device comparising a first source region, a first channel region and a first drain region is arranged on the first semiconducting layer in the multi-layer fin. A second MOS type device comprising a second source region, a second channel region and a second drain region is arranged on the second semiconducting layer in the multi-layer fin. A gate electrode is provided so as to be vertically adjacent to the first and second channel regions.
Language English
Format Patent
Access View details of TTC.PA.245 via HKUST Technology Transfer Center
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