Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/6262

Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template

Authors Chiu, C. H.
Yen, H. H.
Chao, C. L.
Li, Z. Y.
Yu, Peichen
Kuo, H. C.
Lu, T. C.
Wang, S. C.
Lau, K. M.
Cheng, S. J.
Issue Date 2008
Source Applied physics letters , v. 93, (8), 2008, AUG 25, article number 081108
Summary High efficiency GaN-based light-emitting diodes (LEDs) are demonstrated by a nanoscale epitaxial lateral overgrowth (NELO) method on a SiO2 nanorod-array patterned sapphire substrate (NAPSS). The transmission electron microscopy images suggest that the voids between SiO2 nanorods and the stacking faults introduced during the NELO of GaN can effectively suppress the threading dislocation density. The output power and external quantum efficiency of the fabricated LED were enhanced by 52\% and 56\%, respectively, compared to those of a conventional LED. The improvements originated from both the enhanced light extraction assisted by the NAPSS and the reduced dislocation densities using the NELO method. (C) 2008 American Institute of Physics.
Subjects
LED
ISSN 0003-6951
Rights Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://apl.aip.org/
Language English
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