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Defect formation and annealing behaviors of fluorine-implanted GaN layers revealed by positron annihilation spectroscopy

Authors Wang, M.J. HKUST affiliated (currently or previously)
Yuan, L.
Cheng, C.C.
Beling, C.D.
Chen, K.J. View this author's profile
Issue Date 2009
Source Applied physics letters , v. 94, (6), 2009, FEB 9
Summary Defect formation and annealing behaviors of fluorine-implanted, unintentionally doped GaN layers were studied by positron annihilation spectroscopy (PAS). Single Ga vacancies (V-Ga) were identified as the main vacancy-type defects detected by PAS after fluorine implantation at 180 keV with a dose of 1x10(15) cm(-2). Implantation-induced V-Ga tend to aggregate and form vacancy clusters after postimplantation annealing in N-2 ambient at 600 degrees C. Fluorine ions tend to form F-vacancy complexes quickly after thermal annealing, which is consistent with the proposed diffusion model that predicts the behaviors of fluorine in GaN.
ISSN 0003-6951
Rights Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at
Language English
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