Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/6269

Atomistic Modeling of Fluorine Implantation and Diffusion in III-Nitride Semiconductors

Authors Yuan, Li
Wang, Maojun
Chen, Kevin J.
Issue Date 2008
Source IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST , 2008, p. 543-546
Summary A hybrid molecular dynamics (MD)/kinetic Monte Carlo (KMC) model is developed for atomistic modeling of fluorine ion implantation and diffusion in AlGaN/GaN heterostructures. The MD simulation reveals the F distribution profiles and the corresponding defect profiles, and most importantly, the potential energies of fluorine ions in the III-nitride material system. Using the results from the MD simulation, the diffusion process is simulated with KMC method, and the modeling results are validated by the secondary-ion-mass-spectrum (SIMS) measurement. The surface effect on the fluorine's stability and its improvement by passivation are also successfully modeled.
Subjects
GaN
ISSN 0163-1918
ISBN 978-1-4244-2377-4
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Language English
Format Conference paper
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