Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/6441

一种透反式液晶器件及其制备方法

Transflective liquid crystal device and method of manufacturing the same

Authors 孟志国 HKUST affiliated (currently or previously)
王文 View this author's profile
郭海成 View this author's profile
Issue Date 2010-02-24
Source 中国专利 , ZL 2005 8 0049823.2, 2010
Summary 本发明描述电极的构建用于液晶显示器,该显示器采用一种在可见光谱区显示吸收性低于20%的大晶粒低吸收多晶硅,本发明显示制备有源矩阵的衬底,薄膜晶体管的源极、漏极及沟道区和象素电极是相连地形成多硅单层。The construction of electrodes for liquid-crystal displays using larger grain lower absorption (LGLA) poly-Si showing an absorptivity below 20% in the visible light region is described. Integration in the manufacturing of substrates for active-matrix LCDs is shown. Source, drain and channel region ( 108 b , 108 c , 108 d) of the TFTs as well as the pixel-electrode ( 108 e) are formed conjointly in a single poly-Si layer.
Subjects
Language Chinese
Format Patent
Access View details of TTC.PA.199 via HKUST Technology Transfer Center
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