Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/6441

一种透反式液晶器件及其制备方法

Authors Kwok, Hoi-Sing (郭海成)
Wong, Man (王文)
Meng, Zhiguo (孟志國)
Issue Date 2010-02-24
Source 中國專利, ZL 200580049823.2
Summary 本发明描述电极的构建用于液晶显示器,该显示器采用一种在可见光谱区显示吸收性低于20% 的大晶粒低吸收多晶硅,本发明显示制备有源矩阵的衬底,薄膜晶体管的源极、漏极及沟道区和象素电极是相连地形成多硅单层。
Subjects
Rights This patent is also available at HKUST Technology Transfer Center Patent Search at <http://patentsearch.ttc.ust.hk/ListPatentsDetail.asp?id=584>
Language Chinese
Format Patent
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