Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/6580

Fabrication and characterization of horizontally aligned carbon nanotubes for interconnect application

Authors Chai, Y.
Xiao, Z.
Chan, P.C.H.
Issue Date 2009
Source Proceedings - Electronic Components and Technology Conference , 2009, p. 1465-1469
Summary We discuss the use of electron-shading effect during the plasma-enhanced chemical vapor deposition to control the growth of carbon nanotubes (CNTs). We designed and fabricated the trench and island test structures. The horizontally aligned CNTs were grown from the sidewall of the polysilicon structure, parallel to the silicon oxide surface. We investigated the electrical property of the CNT number for the interconnect line application. We also studied the scaling effect of the CNT number. This approach provides a method to implement complex CNT structure by in-stiu growth, and integrate them to realize various electricaldevices and interconnect lines. © 2009 IEEE.
Subjects
ISSN 0569-5503
ISBN 978-1-4244-4475-5
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Language English
Format Conference paper
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