Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/6612

The application of carbon nanotubes in CMOS integrated circuits

Authors Chan, P.C.H.
Yang, C.
Zhang, M.
Fu, Y.
Issue Date 2008
Source International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT , 2008, p. 534-536
Summary With the complementary metal-oxide-semiconductor (CMOS) technology approaching its scaling limit, many novel devices and material are being considered to enable further scaling of CMOS. Carbon nanotubes show unique properties and are currently considered as a potential alternative material for nano-CMOS building blocks. Performance of carbon nanotube field effect transistors (CNFET) can be competitive with Si MOSFET in the sub-20nm regime. With its superior material properties, CNT can also function as quantum wire and a critical material for the integrated circuit interconnection. In this talk, we shall present some of the works we have done on applying carbon nanotubes to the CMOS Integrated Circuits in our research group at the Hong Kong University of Science and Technology. © 2008 IEEE.
Subjects
ISBN 978-1-4244-2185-5
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Language English
Format Conference paper
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