Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/6677

A 405-nW CMOS Temperature Sensor Based on Linear MOS Operation

Authors Law, Man Kay
Bermak, A.
Issue Date 2009
Source IEEE TRANSACTIONS on Circuits and SYSTEMS ii-express Briefs , v. 56, (12), 2009, DEC, p. 891-895
Summary This brief presents a CMOS temperature sensor suitable for ultralow-power applications. With a MOS transistor operating in the linear region, a linear relationship between delay and temperature can be obtained. A differential sensing architecture is utilized to reduce the signal offset and increase the effective signal-to-noise ratio. A design methodology concerning power optimization and improved sensor linearity is also presented. The sensor, which occupies 0.0324 mm(2), is fabricated using the TSMC 0.18-mu m one-polysilicon six-metal (1P6M) process. Measurement results show that the sensor consumes 405 nW with a 1-V supply at 1 ksample/s at room temperature. An inaccuracy value of -0.8 degrees C to +1 degrees C from 0 degrees C to 100 degrees C after calibration is achieved.
Subjects
ISSN 1549-7747
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Language English
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