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A 405-nW CMOS Temperature Sensor Based on Linear MOS Operation

Authors Law, Man Kay HKUST affiliated (currently or previously)
Bermak, Amine View this author's profile
Issue Date 2009
Source IEEE TRANSACTIONS on Circuits and SYSTEMS ii-express Briefs , v. 56, (12), 2009, DEC, p. 891-895
Summary This brief presents a CMOS temperature sensor suitable for ultralow-power applications. With a MOS transistor operating in the linear region, a linear relationship between delay and temperature can be obtained. A differential sensing architecture is utilized to reduce the signal offset and increase the effective signal-to-noise ratio. A design methodology concerning power optimization and improved sensor linearity is also presented. The sensor, which occupies 0.0324 mm(2), is fabricated using the TSMC 0.18-mu m one-polysilicon six-metal (1P6M) process. Measurement results show that the sensor consumes 405 nW with a 1-V supply at 1 ksample/s at room temperature. An inaccuracy value of -0.8 degrees C to +1 degrees C from 0 degrees C to 100 degrees C after calibration is achieved.
ISSN 1549-7747
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Language English
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