Please use this identifier to cite or link to this item:

Ultra low voltage CMOS image sensor architecture

Authors Man Sun Chan
Chen Xu
Wing Hung Ki
Issue Date 2010-12-28
Source US Patent, 7,858,912 B2, 2010
Summary An optical sensor has at least one pixel that generates an output voltage that changes at a rate dependent on the light intensity incident on the pixel. The time for the pixel output voltage to change from a first predefined level to a second predefined level is measured, so as to produce an output indicative of the incident light intensity.
Language English
Format Patent
Access View details via HKUST Technology Transfer Center Patent Search
Files in this item:
File Description Size Format
US7858912.pdf 621442 B Adobe PDF