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Enhancement-mode III-N devices, circuits, and methods

Authors Chen, Kevin J. View this author's profile
Cai, Yong HKUST affiliated (currently or previously)
Lau, Kei May View this author's profile
Issue Date 2011-04-26
Source US Patent , 7,932,539 B2 2011
Summary A method of fabricating AlGaN/GaN enhancement-mode heterostructure field-effect transistors (HFET) using fluorine-based plasma immersion or ion implantation. The method includes: 1) generating gate patterns; 2) exposing the AlGaN/GaN heterostructure in the gate region to fluorine-based plasma treatment with photoresist as the treatment mask in a self-aligned manner; 3) depositing the gate metal to the plasma treated AlGaN/GaN heterostructure surface; 4) lifting off the metal except the gate electrode; and 5) high temperature post-gate annealing ofthe sample. This method can be used to shift the threshold voltage of a HFET toward a more positive value, and ultimately convert a depletion-mode HFET to an enhancement-mode HFET (E-HFET).
Language English
Format Patent
Access View details of TTC.PA.265 via HKUST Technology Transfer Center
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