Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/7221

Enhancement-mode III-N devices, circuits, and methods

Authors Chen, Jing
Cai, Yong
Lau, Kei May
Issue Date 2011-04-26
Source US Patent, 7,932,539 B2 2011
Summary A method of fabricating AlGaN/GaN enhancement-mode heterostructure field-effect transistors (HFET) using fluorine-based plasma immersion or ion implantation. The method includes: 1) generating gate patterns; 2) exposing the AlGaN/GaN heterostructure in the gate region to fluorine-based plasma treatment with photoresist as the treatment mask in a self-aligned manner; 3) depositing the gate metal to the plasma treated AlGaN/GaN heterostructure surface; 4) lifting off the metal except the gate electrode; and 5) high temperature post-gate annealing ofthe sample. This method can be used to shift the threshold voltage of a HFET toward a more positive value, and ultimately convert a depletion-mode HFET to an enhancement-mode HFET (E-HFET).
Subjects
GaN
ICP
Rights This patent is also available at HKUST Technology Transfer Center Patent Search at <http://patentsearch.ttc.ust.hk/ListPatentsDetail.asp?id=494>
Language English
Format Patent
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