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Impurity Effect on Weak Antilocalization in the Topological Insulator Bi2Te3

Authors Hong-Tao He
Gan Wang
Tao Zhang
Iam-Keong Sou
George K. L Wong
Jian-Nong Wang
Hai-Zhou Lu
Shun-Qing Shen
Fu-Chun Zhang
Issue Date 2011
Source Physical review letters, v. 106, (16), April 2011
Summary We study the weak antilocalization (WAL) effect in topological insulator Bi2Te3 thin films at low temperatures. The two-dimensional WAL effect associated with surface carriers is revealed in the tilted magnetic field dependence of magnetoconductance. Our data demonstrate that the observed WAL is robust against deposition of nonmagnetic Au impurities on the surface of the thin films, but it is quenched by the deposition of magnetic Fe impurities which destroy the π Berry phase of the topological surface states. The magnetoconductance data of a 5 nm Bi2Te3 film suggests that a crossover from symplectic to unitary classes is observed with the deposition of Fe impurities.
ISSN 0031-9007
Rights © 2011 American Physical Society
Language English
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