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Impurity effect on weak antilocalization in the topological insulator Bi2Te3

Authors He, Hong-Tao
Wang, Gan
Zhang, Tao
Sou, Iam Keong View this author's profile
Wong, George K.L. View this author's profile
Wang, Jian Nong View this author's profile
Lu, Hai-Zhou
Shen, Shun-Qing
Zhang, Fu-Chun
Issue Date 2011
Source Physical Review Letters , v. 106, (16), April 2011, article number 166805
Summary We study the weak antilocalization (WAL) effect in topological insulator Bi2Te3 thin films at low temperatures. The two-dimensional WAL effect associated with surface carriers is revealed in the tilted magnetic field dependence of magnetoconductance. Our data demonstrate that the observed WAL is robust against deposition of nonmagnetic Au impurities on the surface of the thin films, but it is quenched by the deposition of magnetic Fe impurities which destroy the π Berry phase of the topological surface states. The magnetoconductance data of a 5 nm Bi2Te3 film suggests that a crossover from symplectic to unitary classes is observed with the deposition of Fe impurities.
ISSN 0031-9007
Rights © 2011 American Physical Society
Language English
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