Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/7248

Impurity Effect on Weak Antilocalization in the Topological Insulator Bi2Te3

Authors He, Hong-Tao
Wang, Gan
Zhang, Tao
Sou, Iam-Keong
Wong, George K. L.
Wang, Jian-Nong
Lu, Hai-Zhou
Shen, Shun-Qing
Zhang, Fu-Chun
Issue Date 2011
Source Physical review letters , v. 106, (16), 2011, Apr, article number 166805
Summary We study the weak antilocalization (WAL) effect in topological insulator Bi(2)Te(3) thin films at low temperatures. The two-dimensional WAL effect associated with surface carriers is revealed in the tilted magnetic field dependence of magnetoconductance. Our data demonstrate that the observed WAL is robust against deposition of nonmagnetic Au impurities on the surface of the thin films, but it is quenched by the deposition of magnetic Fe impurities which destroy the pi Berry phase of the topological surface states. The magnetoconductance data of a 5 nm Bi(2)Te(3) film suggests that a crossover from symplectic to unitary classes is observed with the deposition of Fe impurities.
Subjects
WAL
ISSN 0031-9007
Rights Physical Review Letters © copyright (2011) American Physical Society. The Journal's web site is located at http://prl.aps.org/
Language English
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