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Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HFETs

Authors Chen, Jing View this author's profile
Cai, Yong HKUST affiliated (currently or previously)
Lau, Kei May View this author's profile
Issue Date 2011-07-05
Source US Patent , 7,972,915 B2, 2011
Summary A method for and devices utilizing monolithic integration of enhancement-mode and depletion-modeAIGaN/GaN heterojunction field-effect transistors (HFETs) is disclosed. Source and drain ohmic contacts of HFETs are first defined. Gate electrodes of the depletion-mode HFETs are then defined. Gate electrodes of the er由ancement-mode HFETs are then defined using fluoride-based plasma treatment and high temperature post-gate annealing ofthe sample. Device isolation is achieved by either mesa etching or fluoride-based plasma treatment.卫lÏ s method provides a complete planar process for GaN -based integrated circuits favored in high-density and high-speed applications.
Language English
Format Patent
Access View details of TTC.PA.265 via HKUST Technology Transfer Center
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