Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/7261

Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HFETs

Authors Chen, Jing
Cai, Yong
Lau, Kei May
Issue Date 2011-07-05
Source US Patent, 7,972,915 B2, 2011
Summary A method for and devices utilizing monolithic integration of enhancement-mode and depletion-modeAIGaN/GaN heterojunction field-effect transistors (HFETs) is disclosed. Source and drain ohmic contacts of HFETs are first defined. Gate electrodes of the depletion-mode HFETs are then defined. Gate electrodes of the er由ancement-mode HFETs are then defined using fluoride-based plasma treatment and high temperature post-gate annealing ofthe sample. Device isolation is achieved by either mesa etching or fluoride-based plasma treatment.卫lÏ s method provides a complete planar process for GaN -based integrated circuits favored in high-density and high-speed applications.
Subjects
GaN
ICP
Rights This patent is also available at HKUST Technology Transfer Center Patent Search at <http://patentsearch.ttc.ust.hk/ListPatentsDetail.asp?id=497>
Language English
Format Patent
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