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Low density drain HEMTs

Authors Chen, Kevin J. View this author's profile
Lau, Kei May View this author's profile
Issue Date 2011-10-25
Source US Patent , 8,044,432 B2, 2011
Summary Methods and devices for fabricating AlGaN/GaN normally-off high electron mobility transistors (HEMTs). A fluorine-based (electronegative ions-based) plasma treatment or low-energy ion implantation is used to modify the drain-side surface field distribution without the use of a field plate electrode. The off-state breakdown voltage can be improved and current collapse can be completely suppressed in LDD-HEMTs with no significant degradation in gains and cutoff frequencies.
Language English
Format Patent
Access View details of TTC.PA.265 via HKUST Technology Transfer Center
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