Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/7536

Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems

Authors Chen, Jing
Chen, Wanjun
Zhou, Chunhua
Issue Date 2011-12-13
Source US Patent , 8,076,699 B2, 2011
Summary Integrated high efficiency lateral field effect rectifier and HEMT devices of GaN or analogous semiconductor material, methods for manufacturing thereof, and systems which include such integrated devices. The lateral field effect rectifier has an anode containing a shorted ohmic contact and a Schottky contact, and a cathode containing an ohmic contact, while the HEMT preferably has a gate containing a Schottky contact. Two fluorine ion containing regions are formed directly underneath both Schottky contacts in the rectifier and in the HEMT, pinching off the ( electron gas) chaunels in both structures at the hetero-interface between the epitaxial layers.
Subjects
GaN
Rights This patent is also available at HKUST Technology Transfer Center Patent Search at <http://patentsearch.ttc.ust.hk/ListPatentsDetail.asp?id=890>
Language English
Format Patent
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