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Achieving Ultrahigh Carrier Mobility in Two-Dimensional Hole Gas of Black Phosphorus

Authors Long, Gen HKUST affiliated (currently or previously)
Maryenko, Denis
Shen, Junying HKUST affiliated (currently or previously)
Xu, Shuigang HKUST affiliated (currently or previously)
Hou, Jianqiang HKUST affiliated (currently or previously)
Wu, Zefei HKUST affiliated (currently or previously)
Wong, Wing Ki HKUST affiliated (currently or previously).
Han, Tianyi HKUST affiliated (currently or previously)
Lin, Jiangxiazi HKUST affiliated (currently or previously)
Cai, Yuan HKUST affiliated (currently or previously)
Lortz, Rolf Walter View this author's profile
Wang, Ning View this author's profile
Issue Date 2016
Source Nano Letters , v. 16, (12), December 2016, p. 7768-7773
Summary We demonstrate that a field-effect transistor (FET) made of few-layer black phosphorus (BP) encapsulated in hexagonal boron nitride (h-BN) in vacuum exhibits a room-temperature hole mobility of 5200 cm2/(Vs), being limited just by the phonon scattering. At cryogenic temperatures, the FET mobility increases up to 45 000 cm2/(Vs), which is five times higher compared to the mobility obtained in earlier reports. The unprecedentedly clean h-BN-BP-h-BN heterostructure exhibits Shubnikov-de Haas oscillations and a quantum Hall effect with Landau level (LL) filling factors down to v = 2 in conventional laboratory magnetic fields. Moreover, carrier density independent effective mass of m∗ = 0.26 m0 is measured, and a Landé g-factor of g = 2.47 is reported. Furthermore, an indication for a distinct hole transport behavior with up- and down-spin orientations is found. © 2016 American Chemical Society.
ISSN 1530-6984
Language English
Format Article
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