Please use this identifier to cite or link to this item: http://hdl.handle.net/1783.1/964

Hole injection and power efficiency of organic light emitting diodes with ultra-thin inorganic buffer layer on indium tin oxide

Authors Qiu, Chengfeng
Chen, Haiying
Xie, Zhiliang
Wong, Man
Kwok, Hoi-Sing
Issue Date 2002
Source Society for Information Display International Symposium Digest of Technical Papers , v.33, (2), 2002, p. 1262-1265
Summary ITO capped with a variety of ultra-thin metal layers such as platinum, manganese, nickel, gold, lead, magnesium, and non-metal layer such as, carbon, gallium, silicon, has been used as hole-injecting anode in organic light-emitting diodes consisting of CuPc/TPD/Alq<sub>3</sub>. Enhancement in hole injection but not current nor power efficiencies have been obtained in devices with metal-capped ITO, regardless of the work-function of the metals. For devices with silicon-capped anodes, improvements in hole injection, current and power efficiencies have been obtained.
Subjects
Rights This paper is made available with permission of the Society for Information Display. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Language English
Format Conference paper
Access
Files in this item:
File Description Size Format
SID_2002_1262.pdf 273146 B Adobe PDF