Analysis and reduction of kink effect in MILC-TFTs
Bhat, Gururaj A.
|Source||Proceedings of the 18th International Display Research Conference. Asia Display '98. Seoul, South Korea, SID, Sau, Jose, CA, USA, 28 Sept - 1 Oct 1998, p. 433-6|
|Summary||Impact ionization is the main cause of the kink effect in the saturation region of the output characteristics of the field effect transistors. In thin film transistors (TFTs) the kink effect is enhanced due to the presence of traps. The larger the number of traps, the larger the kink effect at a given drain bias. It is observed that the kink effect in conventional metal induced laterally crystal-lized (cMILC)-TFTs occurs at a lower drain bias than that in solid phase crystallized (SPC)-TFTs under the same gate drive. This is shown to result from the overlapping of the MIC/MILC interface and the drain metallurgical junction. Conse-quently, the kink effect can be reduced by eliminating the overlap.|
|Rights||This paper is made available with permission of the Society for Information Display. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.|
Files in this item: